Surface composition change of TiC under 0.15–3 keV hydrogen ion bombardment
Author:
Publisher
Elsevier BV
Subject
Nuclear Energy and Engineering,General Materials Science,Nuclear and High Energy Physics
Reference7 articles.
1. Plasma-Wall Interactions;Braganza,1976
2. Sputtering process of a silicon carbide surface with energetic ions by means of an AES-SIMS-FDS combined system
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4. Sputtering of molybdenum by low energy He+ bombardment
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1. Review: Transition metal-based nanolamellar phases;Progress in Materials Science;2010-09
2. Chemical bonding states of TiC films before and after hydrogen ion irradiation;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2007-12
3. Chemical and compositional changes induced by ion implantation in SiC and resulting hydrogen permeation properties;Surface and Coatings Technology;1994-01
4. Composition changes in Ar+ and e−-bombarded SiC: an attempt to distinguish ballistic and chemically guided effects;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-01
5. Ion bombardment induced mixing of oxygen-exposed solid surfaces during sputtering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1988-06
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