Measurements of distribution of self-bias potential on an RF-plane electrode in plasma etching devices-Reference-Cited by-同舟云学术

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Measurements of distribution of self-bias potential on an RF-plane electrode in plasma etching devices

Published:1993-05 Issue:3 Volume:200 Page:291-295
ISSN:0022-3115
Container-title:Journal of Nuclear Materials
language:en
Short-container-title:Journal of Nuclear Materials

Author:

Tsuzuki K.,Banno T.,Kinbara A.,Nakagawa Y.,Tsukada T.

Publisher

Elsevier BV

Subject

Nuclear Energy and Engineering,General Materials Science,Nuclear and High Energy Physics

Reference9 articles.

1. Glow Discharge Processes;Chapman,1980

2. Plasma Sheath Formation by Radio-Frequency Fields

3. Rutherford backscattering studies of plasma‐etched silicon

4. Analysis of ion induced surface damage on silicon etched in a CF4plasma

5. Measurement of ion energy distributions at the powered rf electrode in a variable magnetic field

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wall charging of a helicon antenna wrapped plasma filled dielectric tube;Physics of Plasmas;2015-01

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