Geometry, electrons, phonons and reactions on Si(001) surfaces-Reference-Cited by-同舟云学术

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Geometry, electrons, phonons and reactions on Si(001) surfaces

Published:2001-06 Issue:1 Volume:137 Page:143-162
ISSN:0010-4655
Container-title:Computer Physics Communications
language:en
Short-container-title:Computer Physics Communications

Author:

Srivastava G.P.

Publisher

Elsevier BV

Subject

General Physics and Astronomy,Hardware and Architecture

Reference84 articles.

1. Surface Science — First Thirty Years,1994

2. Semiconductor Surfaces and Interfaces;Mönch,1995

3. Theoretical Modelling of Semiconductor Surfaces;Srivastava,1999

4. Semiconductor Surface Reconstruction: The Structural Chemistry of Two-Dimensional Surface Compounds

5. Theory of semiconductor surface reconstruction

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical Functionalization and Surface Nanopatterning;Encyclopedia of Interfacial Chemistry;2018

2. Triethylamine on Si(001)-(2 × 1) at 300 K: Molecular Adsorption and Site Configurations Leading to Dissociation;The Journal of Physical Chemistry C;2012-07-26

3. The isomeric effect on the adjacent Si dimer didechlorination of trans and iso-dichloroethylene on Si(100)-2×1;Physical Chemistry Chemical Physics;2011

4. Role of surface strain in the subsurface migration of adsorbates on silicon;Physical Review B;2008-10-16

5. Adsorbate-Geometry Specific Subsurface Relaxation in the CO/Pt(111) System;The Journal of Physical Chemistry B;2004-12-16

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