Triethylamine on Si(001)-(2 × 1) at 300 K: Molecular Adsorption and Site Configurations Leading to Dissociation-Reference-Cited by-同舟云学术

Triethylamine on Si(001)-(2 × 1) at 300 K: Molecular Adsorption and Site Configurations Leading to Dissociation

Published:2012-07-26 Issue:31 Volume:116 Page:16473-16486
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Naitabdi Ahmed¹²³,Bournel Fabrice¹⁴,Gallet Jean-Jacques¹⁴,Markovits Alexis⁵,Rochet François¹⁴,Borensztein Yves²,Silly Mathieu G.⁴,Sirotti Fausto⁴

Affiliation:

1. Laboratoire de Chimie Physique Matière et Rayonnement, UMR 7614, CNRS, Université Pierre et Marie Curie, 11 rue Pierre et Marie Curie, 75005 Paris, France

2. Institut des NanoSciences de Paris, UMR 7588, CNRS, Université Pierre et Marie Curie, 4 place Jussieu, 75005 Paris, France

3. Unité de Catalyse et de Chimie du Solide, UMR 8181, CNRS, Université de Lille 1, Bâtiment C3, 59655 Villeneuve d’Ascq, France

4. Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif sur Yvette Cedex, France

5. Laboratoire de Chimie Théorique, UMR 7616, CNRS, Université Pierre et Marie Curie, 4 place Jussieu, 75005 Paris, France

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp303002c

Reference54 articles.

1. CONTROLLED MOLECULAR ADSORPTION ON SILICON: Laying a Foundation for Molecular Devices

2. The surface as molecular reagent: organic chemistry at the semiconductor interface

3. Physical properties and chemical reactivity of the buckled dimer on Si(100)

4. Order-disorder transition on Si(001)

5. Theoretical study of the Si(100) surface reconstruction

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