High-field electron velocities in silicon surface inversion layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference11 articles.
1. Hot Electron Effects and Saturation Velocities in Silicon Inversion Layers
2. Drift-Velocity Saturation of Holes in Si Inversion Layers
3. Velocity of surface carriers in inversion layers on silicon
4. Effect of Thin Oxide Film on Breakdown Voltage of SiliconN+PJunction
5. IEEE Proc. IEDM;Sabnis,1979
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Carrier Transport in Bulk Silicon and in Weak Silicon Inversion Layers;Advances in Electronics and Electron Physics;1990
2. Picosecond time‐of‐flight measurements of minority electrons in GaAs/AlGaAs quantum well structures;Applied Physics Letters;1986-01-13
3. High Field Surface Drift Velocities in Silicon;The Physics of Submicron Structures;1984
4. High‐field drift velocity of electrons at the Si–SiO2interface as determined by a time‐of‐flight technique;Journal of Applied Physics;1983-03
5. High‐field drift velocity of holes in inversion layers on silicon;Applied Physics Letters;1982-11
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