Characterization of electron trapping defects on silicon by scanning tunneling microscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference7 articles.
1. 7 × 7 Reconstruction on Si(111) Resolved in Real Space
2. Spatial location of electron trapping defects on silicon by scanning tunneling microscopy
3. A simplified scanning tunneling microscope for surface science studies
4. Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (1f?) Noise
5. Capture and emission kinetics of individual Si:SiO2interface states
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