Growth modes of Ag deposited on Si(111) with simultaneous low energy ion bombardment
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference24 articles.
1. Physics and electronics of the noble-metal/elemental-semiconductor interface formation: A status report
2. The structural and electronic properties of cleaved silicon (111) surfaces following adsorption of silver
3. The adsorption of Ag on the Si(111) 7×7 surface at room temperature studied by medium energy ion scattering, LEED and AES
4. Surface Diffusion and Nucleation Processes in Thin Film Formation: The Case of Ag/Si(111)
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1. Growth of (√3×√3)-Ag and (111) oriented Ag islands on Ge/Si(111) surfaces;Applied Surface Science;2009-10
2. Coexistent compressive and tensile strain in Ag thin films on Si(1 1 1)-() surfaces;Applied Surface Science;2007-09
3. Preferential heights in the growth of Ag islands on Si(111)-(7×7) surfaces;Surface Science;2007-02
4. Thickness dependence of surface plasmon damping and dispersion in ultrathin Ag films;Physical Review B;2005-11-03
5. Structure and growth mode of thin Co films on Fe(001): comparison of purely thermal and ion-assisted deposition;Thin Solid Films;2001-10
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