Energy band discontinuities in heterojunctions measured by internal photoemission
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference6 articles.
1. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures
2. Negative charge, barrier heights, and the conduction‐band discontinuity in AlxGa1−xAs capacitors
3. M. Heiblum, M.I. Nathan and M. Eizenberg, Appl. Phys. Letters, in press.
4. Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy composition
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