The development and coexistence of the c(4 × 4) and asymmetric × 3 phases during the adsorption of Sb on In-rich InSb(001)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference10 articles.
1. RHEED Study of InSb Films Grown by Molecular Beam Epitaxy
2. Growth of Sb and InSb by molecular‐beam epitaxy
3. InSb(100) reconstructions probed with core-level photoemission
4. The c(4 × 4) clean surface reconstruction of InSb(001) formed by UHV chemical etching using iodine and chlorine
5. Growth and recovery of α−Sn on InSb(001) using He scattering and LEED
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The atomistic mechanism for Sb segregation and As displacement of Sb in InSb(001) surfaces;Surface Science;2018-01
2. Coexistence of domains: other III–V compounds and II–VI compounds (AlSb, GaP, GaSb, InAs, InP, InSb, CdTe);Physics of Solid Surfaces;2018
3. Atomic structure of the InSb(001)-c(4 × 4) reconstruction determined by X-ray diffraction;Surface Science;1998-02
4. Surface reconstructions of InSb(100) observed by scanning tunneling microscopy;Physical Review B;1994-11-15
5. Surface reconstructions of InSb(001) during molecular beam epitaxy;Surface Science;1994-11
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