Surface reconstructions of InSb(100) observed by scanning tunneling microscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.14965/fulltext
Reference31 articles.
1. Extended infrared response of InAsSb strained‐layer superlattices
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4. The effects of surface damage on surface plasmon excitations in doped InSb(100)
5. Low energy ion beam damage of semiconductor surfaces: a detailed study of InSb(100) using electron energy loss spectroscopy
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2. Electronic Structure of InAs and InSb Surfaces: Density Functional Theory and Angle‐Resolved Photoemission Spectroscopy;Advanced Quantum Technologies;2022-01-20
3. Scanning tunneling microscopy of strained-α-Sn(0 0 1) surface grown on InSb(0 0 1) substrate;Applied Surface Science;2022-01
4. Кинетическая модель формирования состава твердых растворов InAsxSb1-x: влияние скорости роста / Емельянов Е.А., Путято М.А., Преображенский В.В., Петрушков М.О., Семягин Б.Р., Васев А.В.;Тезисы докладов XIV РОССИЙСКОЙ КОНФЕРЕНЦИИ ПО ФИЗИКЕ ПОЛУПРОВОДНИКОВ «ПОЛУПРОВОДНИКИ-2019»;2019-08-20
5. Ellipsometric Method of Substrate Temperature Measurement in Low-Temperature Processes of Epitaxy of InSb Layers;Optoelectronics, Instrumentation and Data Processing;2019-01
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