Direct observation of A 7 × 7 superstructure at the amorphous Si/Si(111) Interface by cross-sectional high resolution transmission electron microscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference19 articles.
1. 7 × 7 Reconstruction on Si(111) Resolved in Real Space
2. Electronic and geometric structure of Si(111)-(7 × 7) and Si(001) surfaces
3. Dimer–adatom–stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2×8) to Si(111)-(2×2), -(5×5), -(7×7), and -(9×9) with scanning tunneling microscopy
4. Structure and Adsorption Characteristics of Clean Surfaces of Germanium and Silicon
5. Newc−2×8unit cell for the Ge(111) surface
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1. Absence of surface stress change during pentacene thin film growth on the Si(111)-(7 × 7) surface: a buried reconstruction interface;New Journal of Physics;2008-02-25
2. Initial surface reconstructions on solid-phase homoepitaxially grown amorphous silicon overlayers on Si(111)-7×7 surface;Surface Science;1999-11
3. Reconstructed Si(111) Surface Obtained by Electron Beam Heating Using a Conventional Transmission Electron Microscope;Japanese Journal of Applied Physics;1995-09-15
4. Stability of surface reconstructions on silicon during RT deposition of Si submonolayers;Surface Science;1995-04
5. Trace of interface reconstruction in Ge solid-phase epitaxy on Si(111);Physical Review B;1994-02-15
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