Photoemission studies of the initial stages of oxidation of GaSb and InP-Reference-Cited by-同舟云学术

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Photoemission studies of the initial stages of oxidation of GaSb and InP

Published:1979-10 Issue:2-3 Volume:88 Page:439-460
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Chye P.W.,Su C.Y.,Lindau I.,Garner C.M.,Pianetta P.,Spicer W.E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference35 articles.

1. Influence of volume dope on Fermi level position at gallium arsenide surfaces

2. Electronic properties of clean cleaved {110} GaAs surfaces

3. Surface state band on GaAs (110) face

4. Relation of Schottky Barriers to Empty Surface States on III-V Semiconductors

5. Photoemission measurements of filled and empty surface states on semiconductors and their relation to schottky barriers

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3. Thermally assisted oxidation of GaSb(100) and the effect of initial oxide phases;Applied Surface Science;2016-04

4. Theoretical study of defect formation during the initial stages of native-oxide growth on GaSb (001);Applied Physics Letters;2014-04-07

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