Electronic states induced by surface defects on GaSb(110)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference14 articles.
1. New phenomena in Schottky barrier formation on III–V compounds
2. Photoemission study of Au Schottky-barrier formation on GaSb, GaAs, and InP using synchrotron radiation
3. The surface electronic structure of 3–5 compounds and the mechanism of Fermi level pinning by oxygen (passivation) and metals (Schottky barriers)
4. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States
5. Surface spectroscopy of Schottky-barrier formation on Si(111) 7 × 7: Photoemission studies of filled surface states and band bending
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