Lateral compressive stress and reconstruction of semiconductor (111) surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference20 articles.
1. New Model for Reconstructed Si(111) 7 × 7 Surface Superlattices
2. Rheed study on the Ge/Si(111) and Si/Ge(111) systems: Reaction of Ge with the Si(111)(7 × 7) surface
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4. Structure of Si(111)−7 × 7. II
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1. Surface effects on the Frenkel pair defects stability in the vicinity of the Si(001) surface;Materials Science in Semiconductor Processing;2015-04
2. Structure of the Stranski-Krastanov layer in surfactant-mediated Sb/Ge/Si(111) epitaxy;Surface Science;1996-05
3. Stress calculations on diamond surfaces;Thin Solid Films;1995-05
4. Strain effects on Si(001);Surface Science;1994-01
5. Total-energy calculations of semiconductor surface reconstructions;Surface Science Reports;1992-09
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