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The effect of channeling on MeV ion-induced auger electron production in silicon

  • Published:1985-07 Issue:1 Volume:157 Page:L335-L344
  • ISSN:0039-6028
  • Container-title:Surface Science
  • language:en
  • Short-container-title:Surface Science

Author:

MacDonald Jack R.,Feldman L.C.,Silverman P.J.,Davies J.A.,Jackman T.E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of thermal vibration correlation of [110] silicon lattice atoms by ion scattering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-05

2. Spectra of secondary electrons induced by channeled and nonchanneled ions in Si and Al;Physical Review A;1996-02-01

3. The transport of keV energy electrons in Si studied by ion-induced Auger excitation in combination with channeling;Surface Science;1991-05

4. Auger electron emission from a single crystal by impact of channeled ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1990-03

5. Ion-induced Auger electron studies on Al(110);Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1990-01
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