Reversal of light- and heavy-hole valence bands in strained GaAsP/AlGaAs quantum wells-Reference-Cited by-同舟云学术

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Reversal of light- and heavy-hole valence bands in strained GaAsP/AlGaAs quantum wells

Published:1990-04 Issue:1-3 Volume:228 Page:314-317
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Koteles Emil S.,Owens Douglas A.,Bertolet Daniel C.,Hsu Jung-Kuei,Kei May Lau

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference15 articles.

1. Strained-layer superlattices: A brief review

2. Band structure engineering of semiconductor lasers for optical communications

3. Coupling of ground and excited state excitations in GaAs under uniaxial stress

4. Enhancement in excitonic absorption due to overlap in heavy‐hole and light‐hole excitons in GaAs/InAlGaAs quantum well structures

5. C. Jagannath, S. Zemon, P. Norris and B.S. Elman, Appl. Phys. Lett. 51 (198) 1268.

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Homogeneous broadening and k-vector conservation in direct bandgap transitions;The European Physical Journal B;2013-05

2. Tailoring light and heavy holes of GaAsP-AlGaAs quantum wells by using interdiffusion for polarization-independent amplifier applications;IEEE Journal of Quantum Electronics;2000-02

3. Exciton dynamics and valence band mixing in tensile-strained semiconductor quantum wells;Semiconductor Science and Technology;2000-02-01

4. First resonant tunneling via a light-hole ground state;Physica E: Low-dimensional Systems and Nanostructures;1998-07

5. Light-hole resonant tunneling through a tensile-strained GaAsP quantum well;Applied Physics Letters;1997-08-25

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