Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb-Reference-Cited by-同舟云学术

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Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb

Published:1990-04 Issue:1-3 Volume:228 Page:344-346
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Mathine D.L.,Durbin S.M.,Gunshor R.L.,Kobayashi M.,Menke D.R.,Gonsalves J.,Otsuka N.,Fu Q.,Hagerott M.,Nurmikko A.V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference16 articles.

1. Nucleation and characterization of pseudomorphic ZnSe grown on molecular beam epitaxially grown GaAs epilayers

2. Low interface state density at an epitaxial ZnSe/epitaxial GaAs interface

3. Pseudomorphic ZnSe/n‐GaAs doped‐channel field‐effect transistors by interrupted molecular beam epitaxy

4. Pseudomorphic ZnTe/AlSb/GaSb heterostructures by molecular beam epitaxy

5. Proposal of a new visible light emitting structure: n-AlSb/p-ZnTe heterojunctions

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Origin of a localized vibrational mode in a GaSb substrate with a MBE-grown ZnTe epilayer;Semiconductor Science and Technology;2006-07-18

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