Origin of a localized vibrational mode in a GaSb substrate with a MBE-grown ZnTe epilayer-Reference-Cited by-同舟云学术

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Origin of a localized vibrational mode in a GaSb substrate with a MBE-grown ZnTe epilayer

Published:2006-07-18 Issue:9 Volume:21 Page:1224-1228
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Kim Hyunjung,Tarhan E,Chen G,Ramdas A K,Sciacca M Dean,Gunshor R L

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Confined carrier quantum states in ultrathin semiconductor heterostructures

2. Pseudomorphic ZnTe/AlSb/GaSb heterostructures by molecular beam epitaxy

3. Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb

4. Direct evidence for the site of substitutional carbon impurity in GaAs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Host isotope effects on the oxygen local vibrations in CdTe;Physica Scripta;2023-10-13

2. Optical investigation of GaSb thin films grown on GaAs by metalorganic magnetron sputtering;Thin Solid Films;2008-06

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