Time of flight of electrons and holes at 77 and 300 K in GaAs/AlAs superlattices-Reference-Cited by-同舟云学术

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Time of flight of electrons and holes at 77 and 300 K in GaAs/AlAs superlattices

Published:1990-04 Issue:1-3 Volume:228 Page:441-445
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Le Person H.,Palmier J.F.,Minot C.,Esnault J.C.,Mollot F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference12 articles.

1. Superlattice and Negative Differential Conductivity in Semiconductors

2. Bloch transport of electrons and holes in superlattice minibands: Direct measurement by subpicosecond luminescence spectroscopy

3. Optical evidence of the direct-to-indirect-gap transition in GaAs-AlAs short-period superlattices

4. Photoconduction dynamics in a GaAs/AlGaAs superlattice photoconductor

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Time-of-flight measurements of negative differential velocity and electron heating in GaAs/AlAs superlattices;Physical Review B;1993-04-15

2. Gunn oscillations up to 20 GHz optically induced in GaAs/AlAs superlattice;Applied Physics Letters;1992-05-11

3. Light induced space charge waves in GaAs/AlAs superlattices;Superlattices and Microstructures;1992-01

4. High field miniband conduction in GaAs/AlAs superlattices;Surface Science;1992-01

5. Miniband Transport and Resonant Tunneling in Superlattices;Resonant Tunneling in Semiconductors;1991

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