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Indirect excitons in coupled quantum well structures

Published:1992-02 Issue:1-3 Volume:263 Page:496-501
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Zrenner A.,Leeb P.,Schäfer J.,Böhm G.,Weimann G.,Worlock J.M.,Florez L.T.,Harbison J.P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference7 articles.

1. Phase transition of an exciton system in GaAs coupled quantum wells

2. Fermi-Dirac distribution of excitons in coupled quantum wells

3. Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Γ-X mixing

4. Long-lived spatially indirect excitons in coupled GaAs/AlxGa1−xAs quantum wells

5. Proc. 20th Int. Conf. on the Physics of Semiconductors;Zrenner,1990

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transport and localization of indirect excitons in a van der Waals heterostructure;Nature Photonics;2024-06-18

2. Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion;Journal of Applied Physics;2024-03-01

3. Excitonic Dynamics at the Type-II Polytype Interface of InP Platelets;ACS Photonics;2023-08-10

4. Fermi edge singularity in neutral electron–hole system;Nature Physics;2023-06-22

5. Excitonic devices in 2D heterostructures;Semiconductors and Semimetals;2023

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