Arsenic interaction with vicinal Si(001) surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference32 articles.
1. Scanning tunneling microscopy of Si(001)
2. Stabilities of single-layer and bilayer steps on Si(001) surfaces
3. Terrace-width-induced domain transition on vicinal Si(100) studied with microprobe diffraction
4. Steps on Si(001) vicinal surfaces tilted by various angles in the [110]-, [100]- and [210]-zones, investigated by high-resolution LEED
5. Temperature dependence of the step structure of vicinal Si(001) surfaces
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1. Effect of ambient pressure and nickel contamination on the dimer-dangling-bond surface state of Si(001)2×1;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2007-07
2. Surface science studies including low-temperature RDS on MOCVD-prepared, As-terminated Si(100) surfaces;Journal of Crystal Growth;2007-01
3. 5-7-5 line defects onAs∕Si(100): A general stress-relief mechanism for V/IV surfaces;Physical Review B;2006-07-06
4. High temperature self-assembly of Ag nanowires on vicinal Si(001);Journal of Physics: Condensed Matter;2005-04-08
5. An RDS, LEED, and STM Study of MOCVD-Prepared Si(100) surfaces;Journal of Crystal Growth;2004-12
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