An RDS, LEED, and STM Study of MOCVD-Prepared Si(100) surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. J.F. Geisz, D.J. Friedman, S. Kurtz, presented at the 29th IEEE Photovoltaic Specialists Conference 2002 (Cat. no. 02CH37361), New Orleans, LA, USA, 2002 (unpublished)
2. Unintentional carbon and hydrogen incorporation in GaNP grown by metal-organic chemical vapor deposition
3. Growth of III/V resonant tunnelling diode on Si substrate with LP-MOVPE
4. The passivating effect of Si(100)–As surface and the adsorption of oxygen
5. Electronic and atomic structure of arsenic terminated Si(100)
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