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Quantum transport in narrow MOSFET channels

Published:1986-04 Issue:1-2 Volume:170 Page:1-13
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Skocpol W.J.,Jackel L.D.,Howard R.E.,Mankiewich P.M.,Tennant D.M.,White Alice E.,Dynes R.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference16 articles.

1. Electrical resistance of disordered one-dimensional lattices

2. Quasi-one-dimensional effects in submicron width silicon inversion layers

3. Magnetoconductance and quantized confinement in narrow silicon inversion layers

4. Conductance in Restricted-Dimensionality Accumulation Layers

5. One-Dimensional Localization and Interaction Effects in Narrow (0.1-μm) Silicon Inversion Layers

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1. Si Resonant Tunneling MOS Transistor;MOS Devices for Low-Voltage and Low-Energy Applications;2016-12-02

2. Conductance fluctuations in semiconductor nanostructures;Journal of Physics: Condensed Matter;2013-09-03

3. INTERSUBBAND ELECTRON SCATTERING RATES IN ONE-DIMENSIONAL Si MOS-STRUCTURE;Physics, Chemistry and Application of Nanostructures;2001-04

4. Mesoscopic conductance and its fluctuations at a nonzero Hall angle;Physical Review B;1997-08-15

5. Quantum-conductance-fluctuation correlation range and amplitude as a parameter-independent probe of the localized-to-extended-state transition in narrow Si MOSFET’s;Physical Review B;1995-05-15

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