Carrier-concentration dependence of plasmon-polar phonon coupling at semiconductor surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference34 articles.
1. Polarons and Excitons in Polar Semiconductors and Ionic Crystals;Richter,1984
2. Light Scattering in Solids IV;Abstreiter,1984
3. Raman spectra of a coupled LO phonon-damped plasmon mode in n-GaAs
4. The energy loss function of the polaron gas
5. Structure of coupled plasmon-phonon modes in degenerate polar semiconductors
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1. Electron States and Elementary Excitations at Semiconductor Surfaces Controlled by Adsorption;Hyomen Kagaku;2006
2. Evolution of electron states at a narrow-gap semiconductor surface in an accumulation-layer formation process;Physical Review B;2002-11-08
3. Evolution of elementary excitations at a doped polar semiconductor surface in a depletion-layer formation process;Physical Review B;2001-04-05
4. Elementary excitations at doped polar semiconductor surfaces with carrier-depletion layers;Applied Surface Science;2001-01
5. Spatial variation of plasmon damping near the polar surfaces of InAs and InSb;Surface Science;1998-05
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