In situ XPS investigation of indium surface segregation for Ga1−xInxAs and Al1−xInxAs alloys grown by MBE on InP(001)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference32 articles.
1. Experimental evidence of difference in surface and bulk compositions of AlxGa1-xAs, AlxIn1-x As and GaxIn1-x As epitaxial layers grown by molecular beam epitaxy
2. Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures
3. GaInAs/InP and GaInP/GaAs (100) interfaces: An ultraviolet photoelectron spectroscopy study
4. Indium surface segregation in strained GaInAs quantum wells grown on GaAs by MBE
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