Evidence for surface derelaxation induced by metals on III-V compound semiconductors: Cs/InP(110)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference27 articles.
1. Electronic surface properties of uhv-cleaved III–V compounds
2. Surface core-level shifts on InP(110): Experiments and Madelung energy calculations
3. Constant final state measurements of surface core-level binding energy shifts: InP(110) and GaAs(110)
4. Photoemission observation of Na-induced states in the band gap and evidence for charge transfer in Na/GaP(110)
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface dipole formation and lowering of the work function by Cs adsorption on InP(100) surface;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2007
2. Quasi–one-dimensional electronic state of alkali metal chains assembled on the InAs(110) surface;Europhysics Letters (EPL);2004-10
3. Influence of oxygen on the thermal desorption of Cs from Si(100);Surface Science;1998-03
4. Observation of a Cs-induced state in the band gap of GaP(110): Alkali-metal bonding and Fermi-level pinning;Physical Review B;1996-09-15
5. A normal incidence X-ray standing wave study of sulphur adsorption on InP(110);Applied Surface Science;1996-09
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