Constant final state measurements of surface core-level binding energy shifts: InP(110) and GaAs(110)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference18 articles.
1. Surface Core-Level Binding-Energy Shifts for GaAs(110) and GaSb(110)
2. Photoemission studies of surface core‐level shifts and their applications
3. Effect of the Madelung potential on surface core-level shifts in GaAs
4. Charge transfer from chemical shifts at (110) surfaces of III–V compound semiconductors
5. Oxidation of InAs(110) surfaces: Auger electron, electron energy loss and ultraviolet photoemission spectroscopy
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