Surface states induced by metal atoms at the Si/electrolyte interface-Reference-Cited by-同舟云学术

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Surface states induced by metal atoms at the Si/electrolyte interface

Published:1983-12 Issue:3 Volume:134 Page:865-885
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Chazalviel J.N.,Stefenel M.,Truong T.B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference37 articles.

1. Semiconductor electrodes. IV. Electrochemical behavior of n- and p-type silicon electrodes in acetonitrile solutions

2. Two-electron oxidations at illuminated N-type semiconducting silicon electrodes

3. Semiconductor electrodes. 24. Behavior of photoelectrochemical cells based on p-type gallium arsenide in aqueous solutions

4. Photoelectrochemistry withp‐Si electrodes: Effects of inversion

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1. Formation of surface states on Pb(111) by Au adsorption;Scientific Reports;2023-01-30

2. Photoelectrochemical Properties of CH3-Terminated p-Type GaP(111)A;The Journal of Physical Chemistry C;2014-05-21

3. Time and Frequency Resolved Studies of Photoelectrochemical Kinetics;Advances in Electrochemical Sciences and Engineering;1999-02-23

4. Free Carrier Generation in Semiconductors Induced by Absorption of Sub-Band Gap Light. A Photoelectrochemical Study with Nanoporous GaP;The Journal of Physical Chemistry B;1998-09-22

5. Electrochemical deposition of metals onto silicon;Journal of Physics D: Applied Physics;1998-08-21

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