Reactions of trimethylaluminum and ammonia on alumina at 600 K — surface chemical aspects of AlN thin film growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference58 articles.
1. Growth of AlN on GaAs(110) by reactive molecular beam deposition
2. Thin aluminum nitride film resonators: miniaturized high sensitivity mass sensors
3. GaN, AlN, and InN: A review
4. The Use of Metalorganics in the Preparation of Semiconductor Materials
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