The effect of As on Al and Ga segregation during the codeposition of Al, Ga and As on a GaAs(100) surface: kinetic simulations-Reference-Cited by-同舟云学术

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The effect of As on Al and Ga segregation during the codeposition of Al, Ga and As on a GaAs(100) surface: kinetic simulations

Published:1991-08 Issue:1-3 Volume:254 Page:209-221
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Lu Yan-Ten,Metiu Horia

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference39 articles.

1. Molecular Beam Epitaxy of III-V Compounds: Application of MBE-Grown Films

2. Molecular Beam Epitaxy of Superlattices in Thin Films

3. Growth of III–V semiconductors by molecular beam epitaxy and their properties

4. Advanced Crystal Growth;Joyce,1987

5. Quantum‐well‐wire growth by molecular‐beam epitaxy: A computer simulation study

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Kinetic simulation of vapor deposition and growth;Physical Review B;1993-08-01

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