Quantum‐well‐wire growth by molecular‐beam epitaxy: A computer simulation study
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344095
Reference9 articles.
1. Molecular Beam Epitaxy of Artificially Layered III-V Semiconductors: Ultrathin-Layer (GaAs)m(AlAs)mSuperlattices and Delta (δ-) Doping in GaAs
2. Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substrates
3. Optical Anisotropy in a Quantum-Well-Wire Array with Two-Dimensional Quantum Confinement
4. MBE Growth and Optical Properties of Novel Corrugated-Interface Quantum Wells
5. Reflection high‐energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurements
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1. Monte carlo simulation of the growth of semiconductor quantum wires;Materials Science and Engineering: B;1996-02
2. Monte Carlo simulation of the growth of semiconductor quantum wires;C,H,N and O in Si and Characterization and Simulation of Materials and Processes;1996
3. Conductance and conductance fluctuations of narrow disordered quantum wires;Physical Review B;1994-10-15
4. Density of states and localization length in compositionally disordered quantum wires;Physical Review B;1993-03-15
5. Coherent-potential approximation calculations in compositionally disordered quantum wires: density of states;Journal of Physics: Condensed Matter;1992-03-09
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