Electronic properties of metal/III–V semiconductor interfaces-Reference-Cited by-同舟云学术

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Electronic properties of metal/III–V semiconductor interfaces

Published:1985-10 Issue:1-3 Volume:162 Page:591-604
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Lindau I.,Kendelewicz T.,Newman N.,List R.S.,Williams M.D.,Spicer W.E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference32 articles.

1. Room temperature exchange reaction at the Al–InP(110) interface: Soft x-ray photoemission studies

2. Electrical study of Schottky barrier heights on atomically clean and air‐exposedn‐InP(110) surfaces

3. Fermi‐level pinning and chemical structure of InP–metal interfaces

4. Systematics of interfacial chemical reactions on InP(110)

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hard x-ray photoelectron spectroscopy and electrical characterization study of the surface potential in metal/Al2O3/GaAs(100) metal-oxide-semiconductor structures;Physical Review B;2013-07-30

2. Chemical Tuning of Metal-Semiconductor Interfaces;Physical Review Letters;2004-09-20

3. Structure of the Bi/InP(110) interface: A photoemission extended x-ray absorption fine-structure study;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1991-07

4. AES and EELS study of alkali-metal adsorption kinetics on either cleaved or sputtered GaAs and InP (110) surfaces;Surface Science;1990-11

5. Low-coverage metal-induced unrelaxation of the semiconductor surface at Ag/InP(110) interfaces: A photoemission extended x-ray absorption fine structure study;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1990-07

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