The surface dipole contribution to the work function for Sb on GaAs(110): a comparative study by Kelvin probe and Raman spectroscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference17 articles.
1. Dynamical analysis of low-energy electron diffraction intensities from GaAs(110)-p(1×1)-Sb(1 ML)
2. LEED-AES-TDS characterization of Sb overlayers on GaAs(110)
3. Sb overlayers on GaAs(110)
4. Thermal stability and Schottky barrier of Sb overlayers on GaAs(110) and InP(110)
5. Observation of interface phonons by light scattering from epitaxial Sb monolayers on III-V semiconductors
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1. Surface Characterization of Gallium Nitride Modified with Peptides before and after Exposure to Ionizing Radiation in Solution;Langmuir;2014-12-17
2. Work-function measurement by high-resolution scanning Kelvin nanoprobe;Measurement Science and Technology;2007-01-19
3. Surface modification of III–V semiconductors: chemical processes and electronic properties;Progress in Surface Science;2002-07
4. References for 4.2;Landolt-Börnstein - Group III Condensed Matter;2002
5. 4.2 Electron work function of metals and semiconductors;Landolt-Börnstein - Group III Condensed Matter;2002
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