Formation of rare earth/semiconductor interfaces: Ho/CdSe(110), Dy/CdSe(110), Gd/CdSe(110)0, Ho/CdS(11), and Dy/CdS(110) studied by Auger spectroscopy-Reference-Cited by-同舟云学术

Formation of rare earth/semiconductor interfaces: Ho/CdSe(110), Dy/CdSe(110), Gd/CdSe(110)0, Ho/CdS(11), and Dy/CdS(110) studied by Auger spectroscopy

Published:1992-05 Issue: Volume:269-270 Page:975-978
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Adamchuk V.K.,Fedorov A.V.,Fedoseenko S.I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference13 articles.

1. The structure and properties of metal-semiconductor interfaces

2. Physics and electronics of the noble-metal/elemental-semiconductor interface formation: A status report

3. The mechanisms of Schottky barrier pinning in III–V semiconductors: Criteria developed from microscopic (atomic level) and macroscopic experiments

4. Summary Abstract: The Si(111)/Mo interface as studied with synchrotron radiation photoemission and Auger electron spectroscopies

5. Modeling a heterogeneous metal/semiconductor interface: Ce on Si(111)

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anion-terminated zinc-blende CdS(100) surface;Physical Review B;1997-10-15

2. Ohmic contacts on n‐type CdTe and CdZnTe using coherently grown neodymium;Applied Physics Letters;1996-07-22

3. Extended synchrotron X-ray reflectivity study of a Sm-based layer buried into CdTe(001);Surface Science;1995-04

4. Formation of the Ho/CdSe(101¯0) interface;Physical Review B;1993-12-15

5. Evidence of an interfacial layer formation during rare‐earth deposition onto CdTe: The case of Sm;Journal of Applied Physics;1993-07