The mechanisms of Schottky barrier pinning in III–V semiconductors: Criteria developed from microscopic (atomic level) and macroscopic experiments
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference77 articles.
1. Metal–GaSe and metal–InP interfaces: Schottky barrier formation and interfacial reactions
2. Zur Halbleitertheorie der Sperrschicht- und Spitzengleichrichter
3. Vereinfachte und erweiterte Theorie der Randschicht-gleichrichter
4. Surface States and Rectification at a Metal Semi-Conductor Contact
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