Arsenic adatom structures for Ge(111) and Si(111) surfaces: first-principles calculations
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference22 articles.
1. Unoccupied surface states revealing the Si(111)√3 √3-Al, -Ga, and -In adatom geometries
2. Geometric structure of the Si(111)√3×√3-Ga surface
3. X-ray standing-wave and tunneling-microscope location of gallium atoms on a silicon surface
4. Gallium-induced perturbations of the Ge(111)-c(2×8) reconstruction
5. Arsenic-terminated Ge(111): An ideal 1×1 surface
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1. Insight of surface treatments for CMOS compatibility of InAs nanowires;Nano Research;2018-12-13
2. Effect of As preadsorption on InAs nanowire heteroepitaxy on Si(111): A first-principles study;Physical Review B;2009-12-01
3. Ga- and As-Adatom phases on the Ge(111) and Si(111) surfaces: analogies and differences;Zeitschrift für Physik B Condensed Matter;1997-12
4. Structure and stability of Bi layers on Si(111) and Ge(111) surfaces;Physical Review B;1997-10-15
5. References, metals on semiconductors;Adsorbed Layers on Surfaces. Part 1: Adsorption on Surfaces and Surface Diffusion of Adsorbates
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