High resolution electron energy loss spectroscopy on the LaF3/Si(111) heterostructure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference25 articles.
1. MBE‐grown fluoride films: A new class of epitaxial dielectrics
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Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoemission study of the growth of the NdF3/Si(111) interface;Applied Physics A Solids and Surfaces;1994-10
2. Photoemission study of the growth of the LaF3/Si (111) interface;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1994-03
3. Vibrational properties of thin CaF2/Si(111) epitaxial layers studied by high resolution electron energy loss spectroscopy;Surface Science;1992-05
4. Cathodoluminescence study of erbium in La1−xErxF3epitaxial layers on Si(111);Applied Physics Letters;1990-12-03
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