Ultrafast optical nonlinearities in type-II AlGaAs/AlAs multiple-quantum-well structures and their device applicability
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference5 articles.
1. Γ to X transport of photoexcited electrons in type II GaAs/AlAs multiple quantum well structures
2. Subpicosecond real-space charge transfer in type-II GaAs/AlAs superlattices
3. InterlayerΓ-Xscattering in staggered-alignmentAl0.34Ga0.66As-AlAs ternary alloy multiple-quantum-well structures
4. Dynamical Optical Nonlinearities Induced by Interlayer Carrier Transfer in Type-II AlxGa1-xAs/AlAs Multiple-Quantum-Well Structures
5. Transient band bending in a staggered-alignment type-II multiple-quantum-well structure
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1. Phase relaxation control in heterostructures featuring charge-transfer excitons;Physical Review B;2022-10-10
2. Picosecond Carrier Spin Relaxation in In0.8Ga0.2As/AlAs/AlAs0.56Sb0.44Coupled Double Quantum Wells;Japanese Journal of Applied Physics;2013-04-01
3. Exciton spin relaxation in In0.53Ga0.47As/AlAs0.56Sb0.44 quantum wells;Applied Physics Letters;2012-02-27
4. Ultrafast All-Optical Serial-to-Parallel Converters Based on Spin-Polarized Surface-Normal Optical Switches;IEEE Journal of Selected Topics in Quantum Electronics;2007
5. Low-temperature-grown surface-reflection all-optical switch (LOTOS);Optical and Quantum Electronics;2001
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