Transient band bending in a staggered-alignment type-II multiple-quantum-well structure
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.11426/fulltext
Reference12 articles.
1. Γ to X transport of photoexcited electrons in type II GaAs/AlAs multiple quantum well structures
2. Subpicosecond real-space charge transfer in type-II GaAs/AlAs superlattices
3. InterlayerΓ-Xscattering in staggered-alignmentAl0.34Ga0.66As-AlAs ternary alloy multiple-quantum-well structures
4. Exponential distribution of the radiative decay rates induced by alloy scattering in an indirect-gap semiconductor
5. Localized indirect excitons in a short-period GaAs/AlAs superlattice
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1. Thermodynamic properties of the haldane and non-haldane systems with the iso-structural compounds (CH3)4NM(NO2)3, M Ni, Co;Journal of Magnetism and Magnetic Materials;1995-02
2. Hole delocalization in CdTe/Cd1−xZnxTe quantum wells;Physical Review B;1994-07-15
3. Picosecond Repetitive Optical Switching Using Type II AlGaAs/AlAs Multiple Quantum Well Structures;Japanese Journal of Applied Physics;1992-03-15
4. Ultrafast optical nonlinearities in type-II AlGaAs/AlAs multiple-quantum-well structures and their device applicability;Surface Science;1992-01
5. Excitonic absorption saturation in ternary alloy AlxGa1−xAs/AlAs multiple‐quantum‐well structures;Applied Physics Letters;1991-09-16
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