The ultra-high resolution depth profiling reference material — Ta2O5 anodically grown on Ta-Reference-Cited by-同舟云学术

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The ultra-high resolution depth profiling reference material — Ta2O5 anodically grown on Ta

Published:1984-04 Issue:2-3 Volume:139 Page:549-557
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Seah M.P.,Mathieu H.J.,Hunt C.P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference30 articles.

1. Quantitative depth profiling in surface analysis: A review

2. Limitations of ion etching for interface analysis

3. The use of X-ray photoelectron spectroscopy in corrosion science

4. The depth dependence of the depth resolution in composition-depth profiling with Auger Electron Spectroscopy

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1. Sputter depth profiling: past, present, and future;Surface and Interface Analysis;2014-04-24

2. Electrochemical Growth of Surface Oxides on Nickel. Part 2: Formation of β-Ni(OH)2 and NiO in Relation to the Polarization Potential, Polarization Time, and Temperature;Electrocatalysis;2013-11-24

3. Elastic photoelectron scattering effects in the XPS analysis of stratified samples;Journal of Physics D: Applied Physics;2012-07-17

4. Auger Electron Spectroscopy and Microscopy — Techniques and Applications;Springer Series in Surface Sciences;2003

5. Ta2O5/SiO2 multilayered thin film on Si as a proposed new reference material for SIMS depth profiling;Surface and Interface Analysis;1998-01

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