Physical and chemical properties of SiSiO2 transition regions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference26 articles.
1. The Si/SiO2 interface examined by cross‐sectional transmission electron microscopy
2. Proc. Intern. Topical Conf. on Physics of SiO2 and Interfaces;Krivanek,1978
3. Morphology of SiSiO2 interface
4. Wetting of thin layers of SiO2by water
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1. Dispersion of MOS capacitance-voltage characteristics resulting from the random channel dopant ion distribution;IEEE Transactions on Electron Devices;1994
2. Quantitative Modeling of Si / SiO2 Interface Fixed Charge: II . Physical Modeling;Journal of The Electrochemical Society;1987-10-01
3. Quantitative Modeling of Si / SiO2 Interface Fixed Charge: I . Experimental Results;Journal of The Electrochemical Society;1987-10-01
4. The Effects of Adsorption on the Electrophysical Parameters of Real Semiconductor Surfaces;Electronic Phenomena in Adsorption and Catalysis on Semiconductors and Dielectrics;1987
5. Surface roughness at the Si(100)-SiO2interface;Physical Review B;1985-12-15
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