Effect of the electron-phonon interaction on the subband structure of inversion layers in compound semiconductors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference10 articles.
1. Theory of electron-hole liquid in semiconductors
2. Temperature dependence of many-body effects in inversion layers
3. Magnetoconductance Oscillations ofn-Type Inversion Layers in InSb Surfaces
4. A. Darr, A. Huber and J.P. Kotthaus, to be published.
5. Spectroscopy of electron subband levels in an inversion layer on InSb
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2. Scattering effects of phonons in two polymorphic structures of gallium nitride;Journal of Applied Physics;2009-09-15
3. Chapter 5 Effects of Heavy Doping and High Excitation on the Band Structure of Gallium Arsenide;Semiconductors and Semimetals;1993
4. Many-body effects in layered systems;Philosophical Transactions of the Royal Society of London. Series A: Physical and Engineering Sciences;1991-03-15
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