Photoemission investigation on the oxidation of Si(111)Ag interfaces and its relation to the interface structure-Reference-Cited by-同舟云学术

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Photoemission investigation on the oxidation of Si(111)Ag interfaces and its relation to the interface structure

Published:1982-04 Issue:2 Volume:116 Page:L202-L206
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Rossi G.,Caliari L.,Abbati I.,Braicovich L.,Lindau I.,Spicer W.E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference14 articles.

1. Electronic structure of a metal-semiconductor interface

2. Investigation of the initial stages of growth of Ag films on Si(111)7 × 7 by a combination of LEED, AES, and UPS

3. An investigation of thin silver films on cleaved silicon surfaces

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AES investigation of annealing effects on the oxygen adsorbed Mn/Si(111) interface;Applied Surface Science;1999-11

2. The oxidation process of the K/GaAs(110) interface;Journal of Physics: Condensed Matter;1999-08-24

3. The catalytic role of ultrathin Mn film in the oxidation of Si(111) 7×7 surface;Applied Surface Science;1998-11

4. Interaction of oxygen with the system;Surface Science;1997-03

5. Local alkali-metal-promoted oxidation of Si(100)-(2×1) surfaces: A generalized-Hubbard-model calculation;Physical Review B;1994-01-15

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