Al2O3 on Si(100) and Ge(100)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference19 articles.
1. Fault‐free silicon at the silicon/sapphire interface
2. Silicon films on sapphire
3. Electronic structure of molecular beam epitaxy grown CaF2 on Si(111)
4. High quality refractory Josephson tunnel junctions utilizing thin aluminum layers
5. Growth of α‐Al2O3 films by molecular layer epitaxy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Al intermediate oxidation states observed by core level photoemission spectroscopy;Journal of Applied Physics;1995-09-15
2. Initial stages of epitaxialCoSi2formation on Si(100) surfaces;Physical Review B;1994-03-15
3. Evidence for a new aluminum oxidation state;Physical Review B;1993-02-15
4. NH3and NO interaction with Si(100)-(2×1) surfaces;Physical Review B;1991-07-15
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