Analysis of reflectivity spectra of silicon implanted with 70 keV B, Si, and Ag ions-Reference-Cited by-同舟云学术

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Analysis of reflectivity spectra of silicon implanted with 70 keV B, Si, and Ag ions

Published:1988-01 Issue:1-2 Volume:193 Page:221-234
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Czarnecka-Such E.,Kisiel A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference27 articles.

1. Report No. 979/PS;Maydell-Ondrusz,1977

2. TEMPERATURE DEPENDENCE OF LATTICE DISORDER CREATED IN Si BY 40 keV Sb IONS

3. Ion Implantation Range and Energy Deposition Distribution;Brice,1975

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1. Pulse ion annealing of silicon layers with silver nanoparticles formed by ion implantation;Vacuum;2020-12

2. Porous silicon and germanium thin layers with silver nanoparticles;Nanocomposites for Photonic and Electronic Applications;2020

3. Thermal annealing of Ag implanted silicon: Relationship between structural and optical properties;Science of Sintering;2020

4. Formation of Ag nanoparticles in Si (100) wafers by single and multiple low energy Ag ions implantation;Surface and Coatings Technology;2019-11

5. Silicon nanostructuring by Ag ions implantation through nanosphere lithography mask;Optical Materials;2019-02

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