Analysis of anisotropic matrix elements in GaAs quantum wells oriented in the [112] crystal axis
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
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1. Linear polarization effects in (110) quantum wells for light propagating perpendicular to the well planes
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1. Intrinsic optical anisotropy in zinc-blende semiconductor quantum wells;Physical Review B;2005-08-01
2. Analytical k∙p method: Anisotropic optical matrix elements in (11N)-oriented quantum wells;Journal of Applied Physics;2004-12-15
3. Large change in biaxial anisotropy of in-plane hole dispersion in a (110) quantum well under [110] uniaxial stress;Physical Review B;2004-05-28
4. Band Engineering of the Polarization and Gain Properties in VCSELs;Springer Series in Photonics;2003
5. Optical Anisotropy in Low-Dimensional Semiconductor Structures;Spectroscopy of Systems with Spatially Confined Structures;2003
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