Large change in biaxial anisotropy of in-plane hole dispersion in a (110) quantum well under [110] uniaxial stress
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.205320/fulltext
Reference33 articles.
1. Effects of uniaxial stress on hole subbands in semiconductor quantum wells. I. Theory
2. Optical anisotropy of (11l)-oriented strained quantum-wells calculated with the effect of the spin-orbit split-off band
3. Erratum: “Optical anisotropy of (11l)-oriented strained quantum-wells calculated with the effect of the spin-orbit split-off band” [J. Appl. Phys. 86, 5663 (1999)]
4. Extreme Optical Anisotropy in (110) Quantum Wells Induced by [110] Uniaxial Stress
5. Linear polarization effects in (110) quantum wells for light propagating perpendicular to the well planes
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