RHEED structure analysis of the GaAs(001)2 × 4 surface for the azimuths [110] and [010]
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference18 articles.
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1. Symmetry Breaking-induced Band-splitting in GaAs Thin Film by First-principles Calculations;Journal of the Vacuum Society of Japan;2017
2. 5.8.10 Ga;Physics of Solid Surfaces;2015
3. 5.3 RHEED;Physics of Solid Surfaces;2015
4. Modeling of the hysteretic phenomena in RHEED intensity variation versus temperature for GaAs and InAs surfaces;Semiconductors;2011-01
5. Surface reconstructions on GaAs(001);Surface Science Reports;2008-07
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