Surface reconstruction geometry of by high angular resolution X-ray photoelectron diffraction
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference19 articles.
1. Surface stoichiometry and structure of GaAs
2. Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AES
3. Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxy
4. Stoichiometry effects on surface properties of GaAs{100} grown in situ by MBE
5. Intrinsic electron accumulation layers on reconstructed clean InAs(100) surfaces
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1. Scanning Tunneling Microscopy of III–V Compound Semiconductor (001) Surfaces;Advances in Scanning Probe Microscopy;2000
2. Energetics and diffusion paths of gallium and arsenic adatoms on flat and stepped GaAs(001) surfaces;Surface Science;1999-04
3. The (2×4) and (2×1) structures of the clean GaP(001) surface;Surface Science;1999-01
4. Determination of the atomic geometry of the GaAs(001)2×4 surface by dynamical RHEED intensity analysis: The β2(2×4) model;Surface Science;1998-11
5. Photoelectron and Auger electron diffraction studies of a sulfur-terminated GaAs(001)-(2×6) surface;Surface Science;1998-01
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