Sb-induced GaAs(111)B surface reconstructions: success and failure of the electron-counting rule
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference21 articles.
1. Electron counting model and its application to island structures on molecular-beam epitaxy grown GaAs(001) and ZnSe(001)
2. Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy
3. Reconstruction of the GaAs (311)Asurface
4. Reconstructions of GaAs(1¯ 1¯ 1¯) surfaces observed by scanning tunneling microscopy
5. Interaction of selenium with the GaAs(001)-(2×4)/c(2×8) surface studied by scanning tunneling microscopy
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2. Bismuth-stabilizedc(2×6)reconstruction on a InSb(100) substrate: Violation of the electron counting model;Physical Review B;2010-01-08
3. Structural and electronic properties of Bi-adsorbate-stabilized reconstructions on the InP(100) andGaAsxN1−x(100)surfaces;Physical Review B;2006-10-04
4. Bi-induced (2×6), (2×8), and (2×4) reconstructions on the InAs(100) surface;Surface Science;2005-12
5. Step Structures on III-V Phosphide (001) Surfaces: How Do Steps and Sb affect CuPt Ordering ofGaInP2?;Physical Review Letters;2005-03-09
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